| SPP80N03S2L04AKSA1 | ||
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| 产品描述：
Single N-Channel 30 V 4.2 mOhm 79 nC OptiMOS™ Power Mosfet - TO-220-3
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| 标准包装：50 | ||
| 数据手册： -- |
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| Packaging: | Tube |
|---|---|
| Qg - Gate Charge: | 600 pC |
| Pd - Power Dissipation: | 500 mW |
| Package / Case: | TO-220-3 |
| Configuration: | 1 N-Channel |
| Unit Weight: | 0.211644 oz |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 2.3 ns |
| Manufacturer: | Infineon |
| Factory Pack Quantity: | 500 |
| Brand: | Infineon Technologies |
| Typical Turn-Off Delay Time: | 7.4 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Maximum Operating Temperature: | + 150 C |
| Rds On - Drain-Source Resistance: | 6 Ohms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Vgs th - Gate-Source Threshold Voltage: | 1.4 V |
| Vgs - Gate-Source Voltage: | 20 V |
| Mounting Style: | SMD/SMT |
| Fall Time: | 22 ns |
| Forward Transconductance - Min: | 0.41 S |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Part # Aliases: | SP000013902 SPP80N03S2L-04 SPP80N03S2L04XK |
| RoHS: | Details |
| Id - Continuous Drain Current: | 190 mA |
| Rise Time: | 3.2 ns |
| ECCN | EAR99 |
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