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| 产品描述：
Single N-Channel 60 V 6.8 mOhm 17 nC OptiMOS™ Power Mosfet - TSDSON-8
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| 标准包装：1 | ||
| 数据手册： -- |
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| Packaging: | Reel |
|---|---|
| Qg - Gate Charge: | 17 nC |
| Pd - Power Dissipation: | 46 W |
| Tradename: | OptiMOS |
| Vgs th - Gate-Source Threshold Voltage: | 2.8 V |
| Vgs - Gate-Source Voltage: | +/- 20 V |
| Fall Time: | 3 ns |
| Forward Transconductance - Min: | 41 S |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Part # Aliases: | BSZ068N06NS SP001067002 |
| RoHS: | Details |
| Id - Continuous Drain Current: | 40 A |
| Rise Time: | 3 ns |
| ECCN | EAR99 |
| Rds On - Drain-Source Resistance: | 6.8 mOhms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Package / Case: | TSDSON-8 |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Typical Turn-On Delay Time: | 7 ns |
| Manufacturer: | Infineon |
| Factory Pack Quantity: | 5000 |
| Brand: | Infineon Technologies |
| Typical Turn-Off Delay Time: | 12 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Maximum Operating Temperature: | + 150 C |
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