BSC077N12NS3GATMA1
  • 量产中
  • PG-TDSON-8
  • EAR99
产品描述:
Single N-Channel 120 V 7.7 mOhm 88 nC OptiMOS™ Power Mosfet - TDSON-8
标准包装:5000
数据手册: --
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FET Feature Standard
Package / Case 8-PowerTDFN
Drain to Source Voltage (Vdss) 120V
Current - Continuous Drain (Id) @ 25°C 13.4A (Ta), 98A (Tc)
Part Status Active
Manufacturer Infineon Technologies
Series OptiMOS™
Vgs(th) (Max) @ Id 4V @ 110µA
Operating Temperature -55°C ~ 150°C (TJ)
Packaging Cut Tape (CT)
Rds On (Max) @ Id, Vgs 7.7 mOhm @ 50A, 10V
Power - Max 139W
Supplier Device Package PG-TDSON-8
Gate Charge (Qg) @ Vgs 88nC @ 10V
Category Discrete Semiconductor Products
FET Type MOSFET N-Channel, Metal Oxide
Family Transistors - FETs, MOSFETs - Single
Mounting Type Surface Mount
Input Capacitance (Ciss) @ Vds 5700pF @ 60V
ECCN EAR99
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