| BSS606NH6327XTSA1 | ||
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| 产品描述：
Transistor: N-MOSFET; unipolar; 60V; 3.2A; 1W; PG-SOT89
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| 标准包装：1 | ||
| 数据手册： |
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| Rds On - Drain-Source Resistance: | 60 mOhms |
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| Number of Channels: | 1 Channel |
| Manufacturer: | Infineon |
| Pd - Power Dissipation: | 1 W |
| Factory Pack Quantity: | 1000 |
| Brand: | Infineon Technologies |
| RoHS: | Details |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Unit Weight: | 0.004603 oz |
| Mounting Style: | SMD/SMT |
| Packaging: | Reel |
| Qg - Gate Charge: | 1.6 nC |
| Series: | BSS606 |
| Transistor Polarity: | N-Channel |
| Technology: | Si |
| Part # Aliases: | BSS606N H6327 SP000691152 |
| Package / Case: | SOT-89-3 |
| Id - Continuous Drain Current: | 2.3 A |
| Configuration: | Single |
| Transistor Type: | 1 N-Channel |
| 数据手册： |
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