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| 产品描述：
Transistor: N-MOSFET; unipolar; 60V; 2.9A; 1.8W; SOT223
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| 标准包装：1 | ||
| 数据手册： |
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| Package / Case | TO-261-4, TO-261AA |
|---|---|
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 2.9A (Tj) |
| Part Status | New Product |
| Manufacturer | Infineon Technologies |
| Series | SIPMOS™ |
| Vgs(th) (Max) @ Id | 4V @ 20µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Packaging | Digi-Reel® |
| Rds On (Max) @ Id, Vgs | 120 mOhm @ 2.9A, 10V |
| Power - Max | 1.8W |
| Supplier Device Package | PG-SOT223-4 |
| Gate Charge (Qg) @ Vgs | 12nC @ 10V |
| Category | Discrete Semiconductor Products |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | Transistors - FETs, MOSFETs - Single |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) @ Vds | 340pF @ 25V |
| ECCN | EAR99 |
| 数据手册： |
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