BSP135H6906XTSA1
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产品描述:
MOSFET N-CH 600V 120MA SOT223
标准包装:1
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Qg - Gate Charge: 3.7 nC
Packaging: Reel
Pd - Power Dissipation: 1.8 W
Package / Case: SOT-223-3
Configuration: Single
Unit Weight: 0.008826 oz
Number of Channels: 1 Channel
Typical Turn-On Delay Time: 5.4 ns
Manufacturer: Infineon
Transistor Polarity: N-Channel
Channel Mode: Depletion
Part # Aliases: BSP135 H6906 SP001058594
RoHS:  Details
Id - Continuous Drain Current: 20 mA
Rise Time: 5.6 ns
Maximum Operating Temperature: + 150 C
Rds On - Drain-Source Resistance: 60 Ohms
Minimum Operating Temperature: - 55 C
Technology: Si
Vgs th - Gate-Source Threshold Voltage: - 1.4 V
Vgs - Gate-Source Voltage: 20 V
Mounting Style: SMD/SMT
Fall Time: 182 ns
Forward Transconductance - Min: 0.16 S
Series: BSP135
Factory Pack Quantity: 1000
Brand: Infineon Technologies
Typical Turn-Off Delay Time: 28 ns
Product Category: MOSFET
Vds - Drain-Source Breakdown Voltage: 600 V
Transistor Type: 1 N-Channel
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