| BSO110N03MS G | ||
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| 产品描述： | ||
| 标准包装：1 | ||
| 数据手册： |
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| Width: | 4 mm |
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| Rds On - Drain-Source Resistance: | 11 mOhms |
| Pd - Power Dissipation: | 1.56 W |
| Tradename: | OptiMOS |
| Height: | 1.65 mm |
| Vgs - Gate-Source Voltage: | 20 V |
| Mounting Style: | SMD/SMT |
| Fall Time: | 4.4 ns |
| Length: | 5 mm |
| Series: | OptiMOS 3M |
| Factory Pack Quantity: | 2500 |
| Brand: | Infineon Technologies |
| Typical Turn-Off Delay Time: | 9.5 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Transistor Type: | 1 N-Channel |
| Packaging: | Reel |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Package / Case: | SOIC-8 |
| Configuration: | Single Quad Drain Triple Source |
| Unit Weight: | 0.019048 oz |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 7.8 ns |
| Manufacturer: | Infineon |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Part # Aliases: | BSO110N03MSGXT BSO110N03MSGXUMA1 SP000446062 |
| RoHS: | Details |
| Id - Continuous Drain Current: | 12.1 A |
| Rise Time: | 4.4 ns |
| Maximum Operating Temperature: | + 150 C |
| 数据手册： |
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