| BSC109N10NS3 G | ||
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| 产品描述：
MOSFET N-CH 100V 63A 8TDSON
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| 标准包装：1 | ||
| 数据手册： |
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| Number of Channels: | 1 Channel |
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| Rds On - Drain-Source Resistance: | 10.9 mOhms |
| Series: | OptiMOS 3 |
| Factory Pack Quantity: | 5000 |
| Brand: | Infineon Technologies |
| Tradename: | OptiMOS |
| Package / Case: | TDSON-8 |
| Id - Continuous Drain Current: | 63 A |
| Transistor Type: | 1 N-Channel |
| Packaging: | Reel |
| Manufacturer: | Infineon |
| Transistor Polarity: | N-Channel |
| Technology: | Si |
| Part # Aliases: | BSC109N10NS3GATMA1 BSC109N10NS3GXT SP000778132 |
| RoHS: | Details |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Mounting Style: | SMD/SMT |
| 数据手册： |
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