| BD679AS | ||
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| 产品描述：
NPN 40 W 80 V 4 A Through Hole Epitaxial Silicon Transistor - TO-126
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| 标准包装：1 | ||
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| Collector- Base Voltage VCBO: | 80 V |
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| Maximum Collector Cut-off Current: | 200 uA |
| Minimum Operating Temperature: | - 65 C |
| Package / Case: | TO-126 |
| Configuration: | Single |
| Unit Weight: | 0.026843 oz |
| Maximum DC Collector Current: | 4 A |
| Continuous Collector Current: | 4 A |
| Manufacturer: | Fairchild Semiconductor |
| Factory Pack Quantity: | 2000 |
| Part # Aliases: | BD679AS_NL |
| Product Category: | Darlington Transistors |
| Maximum Operating Temperature: | + 150 C |
| Width: | 3.25 mm |
| Packaging: | Bulk |
| Pd - Power Dissipation: | 40 W |
| Height: | 11 mm |
| Mounting Style: | Through Hole |
| Emitter- Base Voltage VEBO: | 5 V |
| Length: | 8 mm |
| DC Collector/Base Gain hfe Min: | 750 |
| Transistor Polarity: | NPN |
| Brand: | Fairchild Semiconductor |
| RoHS: | Details |
| Collector- Emitter Voltage VCEO Max: | 80 V |
| ECCN | EAR99 |
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