BSZ100N06LS3GATMA1
BSZ100N06LS3GATMA1
  • ACTIVE
  • EAR99
Product description : Single N-Channel 60 V 10 mOhm 34 nC OptiMOS™ Power Mosfet - TSDSON-8
SPQ:1
Datasheet : --
  • Specifications
  • Product Attributes
  • Documents
  • Product reviews
Width: 3.3 mm
Rds On - Drain-Source Resistance: 10 mOhms
Minimum Operating Temperature: - 55 C
Technology: Si
Package / Case: TSDSON-8
Height: 1.1 mm
Vgs - Gate-Source Voltage: +/- 20 V
Number of Channels: 1 Channel
Typical Turn-On Delay Time: 8 ns
Forward Transconductance - Min: 41 S
Series: BSZ100N06
Factory Pack Quantity: 5000
Brand: Infineon Technologies
Typical Turn-Off Delay Time: 19 ns
Product Category: MOSFET
Vds - Drain-Source Breakdown Voltage: 60 V
Transistor Type: 1 N-Channel
ECCN EAR99
Packaging: Reel
Qg - Gate Charge: 15 nC
Pd - Power Dissipation: 50 W
Tradename: OptiMOS
Vgs th - Gate-Source Threshold Voltage: 1.7 V
Configuration: Single
Mounting Style: SMD/SMT
Fall Time: 8 ns
Length: 3.3 mm
Manufacturer: Infineon
Transistor Polarity: N-Channel
Channel Mode: Enhancement
Part # Aliases: BSZ100N06LS3 BSZ100N06LS3GXT G SP000453672
RoHS:  Details
Id - Continuous Drain Current: 20 A
Rise Time: 58 ns
Maximum Operating Temperature: + 150 C
You can comment after logging in.

Supplier Stock

Offline Manufacture or Manufacture authorized supplier owned stock and price , need double confirmation and share out from them

stock10000Update On
2025-06-13
Lead-Time--
SPQ/MOQ1/1
Location--
DateCode--

Supplier Code:SP1038

Offline Manufacture or Manufacture authorized supplier owned stock and price , need double confirmation and share out from them

$0.582395

4.83717

stock990Update On
2025-06-14
Lead-Time--
Supplier SPQ/MOQ1/1
Location--
DateCode--

Please enter the verification code in the image below:

verification code