BSZ100N06LS3GATMA1 | ||
---|---|---|
|
||
|
||
Product description : Single N-Channel 60 V 10 mOhm 34 nC OptiMOS™ Power Mosfet - TSDSON-8 | ||
SPQ:1 | ||
Datasheet : -- |
Width: | 3.3 mm |
---|---|
Rds On - Drain-Source Resistance: | 10 mOhms |
Minimum Operating Temperature: | - 55 C |
Technology: | Si |
Package / Case: | TSDSON-8 |
Height: | 1.1 mm |
Vgs - Gate-Source Voltage: | +/- 20 V |
Number of Channels: | 1 Channel |
Typical Turn-On Delay Time: | 8 ns |
Forward Transconductance - Min: | 41 S |
Series: | BSZ100N06 |
Factory Pack Quantity: | 5000 |
Brand: | Infineon Technologies |
Typical Turn-Off Delay Time: | 19 ns |
Product Category: | MOSFET |
Vds - Drain-Source Breakdown Voltage: | 60 V |
Transistor Type: | 1 N-Channel |
ECCN | EAR99 |
Packaging: | Reel |
Qg - Gate Charge: | 15 nC |
Pd - Power Dissipation: | 50 W |
Tradename: | OptiMOS |
Vgs th - Gate-Source Threshold Voltage: | 1.7 V |
Configuration: | Single |
Mounting Style: | SMD/SMT |
Fall Time: | 8 ns |
Length: | 3.3 mm |
Manufacturer: | Infineon |
Transistor Polarity: | N-Channel |
Channel Mode: | Enhancement |
Part # Aliases: | BSZ100N06LS3 BSZ100N06LS3GXT G SP000453672 |
RoHS: | Details |
Id - Continuous Drain Current: | 20 A |
Rise Time: | 58 ns |
Maximum Operating Temperature: | + 150 C |
Supplier Stock
Offline Manufacture or Manufacture authorized supplier owned stock and price , need double confirmation and share out from them
stock | 10000 | Update On 2025-06-13 |
---|---|---|
Lead-Time | -- | |
SPQ/MOQ | 1/1 | |
Location | -- | |
DateCode | -- |
Supplier Code:SP1038
Offline Manufacture or Manufacture authorized supplier owned stock and price , need double confirmation and share out from them
stock | 990 | Update On 2025-06-14 |
---|---|---|
Lead-Time | -- | |
Supplier SPQ/MOQ | 1/1 | |
Location | -- | |
DateCode | -- |
Please enter the verification code in the image below: