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| Product description : MOSFET 2P-CH 30V 4.9A 8SOIC | ||
| SPQ：100 | ||
| Datasheet : -- |
- Specifications
- Product Attributes
- Documents
- Product reviews
| FET Feature | Logic Level Gate |
|---|---|
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Drain to Source Voltage (Vdss) | 30V |
| Gate Charge (Qg) @ Vgs | 34nC @ 10V |
| Category | Discrete Semiconductor Products |
| FET Type | 2 P-Channel (Dual) |
| Family | Transistors - FETs, MOSFETs - Arrays |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) @ Vds | 710pF @ 25V |
| Rds On (Max) @ Id, Vgs | 58 mOhm @ 4.9A, 10V |
| Power - Max | 2W |
| Supplier Device Package | 8-SO |
| Part Status | Obsolete |
| Manufacturer | Infineon Technologies |
| Series | HEXFET® |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Packaging | Tube |
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- Replacement Products
- Associated Product
- P2P:A direct drop-in replacement or second source option. Possible minor parametric differences. No change required in most designs.
- Functional Equivalent:A direct replacement or second source option. Possible major parametric differences. Changes may be required in some designs.
- Contain: The functions that one IC can achieve contain the functions that another IC can achieve.
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