| APT94N65B2C6 | ||
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| 产品描述：
APT94N65 Series N Channel 650 V 94 A 35 mOhm 320 nC Mosfet - TO-247-3
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| 标准包装：50 | ||
| 数据手册： -- |
- 规格参数
- 产品特性
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| Width: | 5.31 mm |
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| Qg - Gate Charge: | 320 nC |
| Pd - Power Dissipation: | 833 W |
| Package / Case: | TMAX-3 |
| Height: | 21.46 mm |
| Vgs - Gate-Source Voltage: | +/- 20 V |
| Fall Time: | 172 ns |
| Length: | 16.26 mm |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 323 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 650 V |
| Maximum Operating Temperature: | + 150 C |
| Rds On - Drain-Source Resistance: | 35 mOhms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Typical Turn-On Delay Time: | 26 ns |
| Manufacturer: | Microsemi |
| Factory Pack Quantity: | 1 |
| Brand: | Microsemi |
| RoHS: | Details |
| Id - Continuous Drain Current: | 94 A |
| Rise Time: | 59 ns |
| ECCN | EAR99 |
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