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| 产品描述：
Single N-Channel 55V 8 mOhm 146 nC HEXFET® Power Mosfet - D2PAK
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| 数据手册： |
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| Rds On (Max) @ Id, Vgs | 8 mOhm @ 62A, 10V |
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| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
| Series | HEXFET® |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Capacitance (Ciss) (Max) @ Vds | 3247pF @ 25V |
| Power Dissipation (Max) | 200W (Tc) |
| Manufacturer | Infineon Technologies |
| Vgs (Max) | ±20V |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package | D2PAK |
| FET Type | N-Channel |
| Mounting Type | Surface Mount |
| Packaging | Tape & Reel (TR) |
| Categories | Discrete Semiconductor Products |
| Gate Charge (Qg) (Max) @ Vgs | 146nC @ 10V |
| Technology | MOSFET (Metal Oxide) |
| Part Status | Active |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
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