| SIR670DP-T1-GE3 | ||
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| Product description : MOSFET N-CH 60V 60A PPAK SO-8 | ||
| SPQ：1 | ||
| Datasheet : -- |
- Specifications
- Product Attributes
- Documents
- Product reviews
| FET Feature | Logic Level Gate |
|---|---|
| Package / Case | PowerPAK® SO-8 |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Gate Charge (Qg) @ Vgs | 63nC @ 10V |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | FETs - Single |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 4.8 mOhm @ 20A, 10V |
| Power - Max | 56.8W |
| Supplier Device Package | PowerPAK® SO-8 |
| Standard Package | 3,000 |
| Packaging | Tape & Reel (TR) |
| Series | TrenchFET® |
| Vgs(th) (Max) @ Id | 2.8V @ 250µA |
| Input Capacitance (Ciss) @ Vds | 2815pF @ 30V |
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- Replacement Products
- Associated Product
- P2P:A direct drop-in replacement or second source option. Possible minor parametric differences. No change required in most designs.
- Functional Equivalent:A direct replacement or second source option. Possible major parametric differences. Changes may be required in some designs.
- Contain: The functions that one IC can achieve contain the functions that another IC can achieve.
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