| 1N914B-TP | ||
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| Product description : 1N914B Series 500 mW 100 V 4 ns Silicon Epitaxial Diode - DO-35 | ||
| SPQ：1 | ||
| Datasheet : -- |
- Specifications
- Product Attributes
- Documents
- Product reviews
| Operating Temperature - Junction | -55°C ~ 150°C |
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| Package / Case | DO-204AH, DO-35, Axial |
| Part Status | Obsolete |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Manufacturer | Micro Commercial Co |
| Current - Reverse Leakage @ Vr | 5µA @ 75V |
| Mounting Type | Through Hole |
| Voltage - Forward (Vf) (Max) @ If | 1V @ 100mA |
| ECCN | EAR99 |
| Current - Average Rectified (Io) | 200mA |
| Supplier Device Package | DO-35 |
| Diode Type | Standard |
| Category | Discrete Semiconductor Products |
| Reverse Recovery Time (trr) | 4ns |
| Family | Diodes - Rectifiers - Single |
| Voltage - DC Reverse (Vr) (Max) | 100V |
| Packaging | Tape & Reel (TR) |
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