AUIRFB8405
  • 量产中
  • TO-220AB
产品描述:
Transistor: N-MOSFET; unipolar; 40V; 120A; 163W; TO220AB
标准包装:1
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FET Feature Standard
Package / Case TO-220-3
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Product Training Modules Discrete Power MOSFETs 40V and Below
Online Catalog N-Channel Standard FETs
Family FETs - Single
Vgs(th) (Max) @ Id 3.9V @ 100µA
Packaging Tube  
Rds On (Max) @ Id, Vgs 2.5 mOhm @ 100A, 10V
Power - Max 163W
Supplier Device Package TO-220AB
Gate Charge (Qg) @ Vgs 161nC @ 10V
FET Type MOSFET N-Channel, Metal Oxide
Series HEXFET®
Mounting Type Through Hole
Input Capacitance (Ciss) @ Vds 5193pF @ 25V
RoHS Lead free / RoHS Compliant
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