2N2102 specifications -Ameya360 electronic components purchase network


2N2102

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Product description : Transistor: NPN; bipolar; 65V; 1A; 1/5W; TO39; 6dB
SPQ：1
Datasheet : 2N2102.pdf

Collector- Base Voltage VCBO:	120 V
Collector-Emitter Saturation Voltage:	0.5 V
Minimum Operating Temperature:	- 65 C
Package / Case:	TO-39
Gain Bandwidth Product fT:	60 MHz
Mounting Style:	Through Hole
Maximum DC Collector Current:	1 A
Continuous Collector Current:	1 A
Manufacturer:	Central Semiconductor
Transistor Polarity:	NPN
Brand:	Central Semiconductor
RoHS:	Details
Collector- Emitter Voltage VCEO Max:	65 V
Width:	9.4 mm
Packaging:	Bulk
Pd - Power Dissipation:	1 W
Height:	6.6 mm
Configuration:	Single
Emitter- Base Voltage VEBO:	7 V
Length:	9.4 mm
DC Collector/Base Gain hfe Min:	10
Series:	2N2102
Factory Pack Quantity:	500
Part # Aliases:	BK
Product Category:	Bipolar Transistors - BJT
Maximum Operating Temperature:	+ 150 C

Datasheet： 2N2102.pdf

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Stock code :	322627
Mfg name :	STMicroelectronics
MPN :	2N2102
Product description :	Transistor: NPN; bipolar; 65V; 1A; 1/5W; TO39; 6dB

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