| 2SA1419S-TD-E | ||
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| 产品描述：
-160V,-1.5A,PNP Single Transistor
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| 标准包装：1 | ||
| 数据手册： |
- 规格参数
- 产品特性
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| Collector-Emitter Saturation Voltage: | - 200 mV |
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| Emitter- Base Voltage VEBO: | - 6 V |
| Packaging: | Reel |
| DC Collector/Base Gain hfe Min: | 100 at - 100 mA at - 5 V |
| Series: | 2SA1419 |
| Minimum Operating Temperature: | - 55 C |
| Factory Pack Quantity: | 1000 |
| RoHS: | Details |
| Product Category: | Bipolar Transistors - BJT |
| Gain Bandwidth Product fT: | 120 MHz |
| Unit Weight: | 0.004603 oz |
| Maximum Operating Temperature: | + 150 C |
| Maximum DC Collector Current: | - 2.5 A |
| DC Current Gain hFE Max: | 400 at - 100 mA at - 5 V |
| Collector- Base Voltage VCBO: | - 180 V |
| Manufacturer: | ON Semiconductor |
| Pd - Power Dissipation: | 1.5 W |
| Transistor Polarity: | PNP |
| Brand: | ON Semiconductor |
| Package / Case: | SOT-89-3 |
| Collector- Emitter Voltage VCEO Max: | - 160 V |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| ECCN | EAR99 |
| 数据手册： |
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