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| 产品描述：
2SA1962 Series 250 V CE Breakdown 17 A PNP Epitaxial Silicon Transistor TO-3P
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| 标准包装：1 | ||
| 数据手册： |
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| Collector- Base Voltage VCBO: | - 250 V |
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| Collector-Emitter Saturation Voltage: | - 400 mV |
| Minimum Operating Temperature: | - 55 C |
| Package / Case: | TO-3P-3 |
| Gain Bandwidth Product fT: | 30 MHz |
| Mounting Style: | Through Hole |
| Emitter- Base Voltage VEBO: | - 5 V |
| Length: | 15.6 mm |
| DC Collector/Base Gain hfe Min: | 80 at 1 A at 5 V |
| Transistor Polarity: | PNP |
| Brand: | Fairchild Semiconductor |
| Product Category: | Bipolar Transistors - BJT |
| Maximum Operating Temperature: | + 150 C |
| Width: | 4.8 mm |
| Packaging: | Bulk |
| Pd - Power Dissipation: | 130000 mW |
| Height: | 19.9 mm |
| Configuration: | Single |
| Unit Weight: | 0.225789 oz |
| Maximum DC Collector Current: | - 17 A |
| Continuous Collector Current: | 15 A |
| Manufacturer: | Fairchild Semiconductor |
| Factory Pack Quantity: | 450 |
| RoHS: | Details |
| Collector- Emitter Voltage VCEO Max: | - 250 V |
| ECCN | EAR99 |
| 数据手册： |
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