2SA2013-TD-E
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产品描述:
2SA2013-TD-E , PNP 双极晶体管, -4 A, Vce=-50 V, HFE:200, 360 MHz, 3针 PCP封装
标准包装:1
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Collector-Emitter Saturation Voltage: - 200 mV
Maximum DC Collector Current: - 7 A
Packaging: Reel
Continuous Collector Current: - 4 A
Manufacturer: ON Semiconductor
Pd - Power Dissipation: 3.5 W
Factory Pack Quantity: 1000
RoHS:  Details
Product Category: Bipolar Transistors - BJT
Gain Bandwidth Product fT: 360 MHz
Mounting Style: SMD/SMT
Emitter- Base Voltage VEBO: - 6 V
DC Current Gain hFE Max: 560
Collector- Base Voltage VCBO: - 50 V
DC Collector/Base Gain hfe Min: 200
Series: 2SA2013
Transistor Polarity: PNP
Brand: ON Semiconductor
Package / Case: PCP-3
Collector- Emitter Voltage VCEO Max: - 50 V
Configuration: Single
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