NSTB60BDW1T1G specifications -Ameya360 electronic components purchase network


NSTB60BDW1T1G

ACTIVE SC-88/SC70-6/SOT-363
Product description : TRANS NPN PREBIAS/PNP 0.25W SC88
SPQ：1
Datasheet : NSTB60BDW1T1G.pdf

Vce Saturation (Max) @ Ib, Ic	250mV @ 5mA, 10mA / 500mV @ 5mA, 50mA
Resistor - Base (R1) (Ohms)	22k
Package / Case	6-TSSOP, SC-88, SOT-363
Transistor Type	1 NPN Pre-Biased, 1 PNP
Supplier Device Package	SC-88/SC70-6/SOT-363
PCN Design/Specification	Copper Wire 08/Jun/2009
Current - Collector (Ic) (Max)	150mA
Family	Transistors (BJT) - Arrays, Pre-Biased
Current - Collector Cutoff (Max)	500nA
Frequency - Transition	140MHz
PCN Assembly/Origin	Wafer Source Addition 26/Nov/2014
Power - Max	250mW
Resistor - Emitter Base (R2) (Ohms)	47k
Standard Package	1
Packaging	Cut Tape (CT)
Voltage - Collector Emitter Breakdown (Max)	50V
Mounting Type	Surface Mount
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 5mA, 10V / 120 @ 5mA, 10V

Datasheet： NSTB60BDW1T1G.pdf

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