| NE3210S01 | ||
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| 产品描述：
FET RF 4V 12GHZ S01
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| 标准包装：1 | ||
| 数据手册： |
- 规格参数
- 产品特性
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| Product: | RF JFET |
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| Packaging: | Bulk |
| Forward Transconductance - Min: | 55 mS |
| Pd - Power Dissipation: | 165 mW |
| Factory Pack Quantity: | 1 |
| Brand: | CEL |
| Package / Case: | SO-1 |
| Product Category: | RF JFET Transistors |
| Vds - Drain-Source Breakdown Voltage: | 4 V |
| Type: | GaAs HFET |
| Gate-Source Cutoff Voltage: | 2 V |
| Maximum Operating Temperature: | + 125 C |
| Operating Frequency: | 12 GHz |
| Gain: | 13.5 dB |
| Manufacturer: | CEL |
| Transistor Polarity: | N-Channel |
| Technology: | GaAs |
| RoHS: | Details |
| Vgs - Gate-Source Breakdown Voltage: | - 3 V |
| Id - Continuous Drain Current: | 70 mA |
| NF - Noise Figure: | 0.35 dB |
| Transistor Type: | HFET |
| Mounting Style: | SMD/SMT |
| 数据手册： |
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