IXTX170P10P specifications -Ameya360 electronic components purchase network


IXTX170P10P

ACTIVE PLUS247鈩�3
Product description : Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -170A; 890W; 176ns
SPQ：1
Datasheet : IXTX170P10P.pdf

FET Feature	Standard
Package / Case	TO-247-3
Drain to Source Voltage (Vdss)	100V
Standard Package	30
Current - Continuous Drain (Id) @ 25掳C	170A (Tc)
FET Type	MOSFET P-Channel, Metal Oxide
Family	FETs - Single
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	12 mOhm @ 500mA, 10V
Power - Max	890W
Supplier Device Package	PLUS247鈩�3
Gate Charge (Qg) @ Vgs	240nC @ 10V
Packaging	Tube
Series	PolarP鈩�/a>
Vgs(th) (Max) @ Id	4V @ 1mA
Input Capacitance (Ciss) @ Vds	12600pF @ 25V

Datasheet： IXTX170P10P.pdf

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Stock code :	2788614
Mfg name :	IXYS Corporation
MPN :	IXTX170P10P
Product description :	Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -170A; 890W; 176ns

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