| IXTP2R4N120P | ||
|---|---|---|
|
|
||
|
||
| 产品描述：
Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 2.4A; Idm: 6A; 125W
|
||
| 标准包装：1 | ||
| 数据手册： |
- 规格参数
- 产品特性
- 技术文档
- 产品评论
| FET Feature | Standard |
|---|---|
| Package / Case | TO-220-3 |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 2.4A (Tc) |
| Gate Charge (Qg) @ Vgs | 37nC @ 10V |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | FETs - Single |
| Mounting Type | Through Hole |
| ECCN | ECL99 |
| Rds On (Max) @ Id, Vgs | 7.5 Ohm @ 500mA, 10V |
| Power - Max | 125W |
| Supplier Device Package | TO-220AB |
| Standard Package | 50 |
| Packaging | Tube |
| Series | Polar™ |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Input Capacitance (Ciss) @ Vds | 1207pF @ 25V |
| 数据手册： |
|---|
登录之后就可发表评论
请输入下方图片中的验证码：