IXTK200N10P specifications -Ameya360 electronic components purchase network


IXTK200N10P

ACTIVE TO-264 (IXTK) EAR99
Product description : Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 200A; 800W; TO264
SPQ：1
Datasheet : IXTK200N10P.pdf

FET Feature	Standard
Package / Case	TO-264-3, TO-264AA
Drain to Source Voltage (Vdss)	100V
Standard Package	25
Current - Continuous Drain (Id) @ 25掳C	200A (Tc)
FET Type	MOSFET N-Channel, Metal Oxide
Family	FETs - Single
Mounting Type	Through Hole
ECCN	EAR99
Rds On (Max) @ Id, Vgs	7.5 mOhm @ 100A, 10V
Power - Max	800W
Supplier Device Package	TO-264 (IXTK)
Gate Charge (Qg) @ Vgs	240nC @ 10V
Packaging	Tube
Series	PolarHT鈩�/a>
Vgs(th) (Max) @ Id	5V @ 500碌A
Input Capacitance (Ciss) @ Vds	7600pF @ 25V

Datasheet： IXTK200N10P.pdf

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Stock code :	2788397
Mfg name :	IXYS Corporation
MPN :	IXTK200N10P
Product description :	Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 200A; 800W; TO264

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