IXFX200N10P specifications -Ameya360 electronic components purchase network


IXFX200N10P

ACTIVE PLUS247™-3 EAR99
Product description : Single N-Channel 100 V 830 W 235 nC Through Hole Power Mosfet - TO-264
SPQ：30
Datasheet : IXFX200N10P.pdf

FET Feature	Standard
Package / Case	TO-247-3
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	200A (Tc)
Gate Charge (Qg) @ Vgs	235nC @ 10V
FET Type	MOSFET N-Channel, Metal Oxide
Family	FETs - Single
Mounting Type	Through Hole
ECCN	EAR99
Rds On (Max) @ Id, Vgs	7.5 mOhm @ 100A, 10V
Power - Max	830W
Supplier Device Package	PLUS247™-3
Standard Package	30
Packaging	Tube
Series	HiPerFET™, PolarP2™
Vgs(th) (Max) @ Id	5V @ 8mA
Input Capacitance (Ciss) @ Vds	7600pF @ 25V

Datasheet： IXFX200N10P.pdf

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Stock code :	2787693
Mfg name :	IXYS Corporation
MPN :	IXFX200N10P
Product description :	Single N-Channel 100 V 830 W 235 nC Through Hole Power Mosfet - TO-264

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