| IXBK55N300 | ||
|---|---|---|
|
|
||
|
||
| 产品描述：
IXBK55N300 Series 3000 V 130 A High Gain BiMOSFETTM MOS Transistor - TO-264
|
||
| 标准包装：25 | ||
| 数据手册： -- |
- 规格参数
- 产品特性
- 技术文档
- 产品评论
| Current - Collector Pulsed (Icm) | 600A |
|---|---|
| Power - Max | 625W |
| Standard Package | 25 |
| Packaging | Tube |
| Gate Charge | 335nC |
| Voltage - Collector Emitter Breakdown (Max) | 3000V |
| Family | IGBTs - Single |
| Vce(on) (Max) @ Vge, Ic | 3.2V @ 15V, 55A |
| ECCN | EAR99 |
| Package / Case | TO-264-3, TO-264AA |
| Supplier Device Package | TO-264 |
| Current - Collector (Ic) (Max) | 130A |
| Reverse Recovery Time (trr) | 1.9µs |
| Online Catalog | Standard IGBTs |
| Series | BIMOSFET™ |
| Mounting Type | Through Hole |
| Input Type | Standard |
登录之后就可发表评论
请输入下方图片中的验证码：