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| 产品描述：
Single N-Channel 900 V 1.2 Ohm 28 nC CoolMOS™ Power Mosfet - TO-252-3
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| 标准包装：1 | ||
| 数据手册： |
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| FET Feature | Standard |
|---|---|
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Drain to Source Voltage (Vdss) | 900V |
| Current - Continuous Drain (Id) @ 25°C | 5.1A (Tc) |
| Part Status | Active |
| Manufacturer | Infineon Technologies |
| Series | CoolMOS™ |
| Vgs(th) (Max) @ Id | 3.5V @ 310µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Packaging | Tape & Reel (TR) |
| Rds On (Max) @ Id, Vgs | 1.2 Ohm @ 2.8A, 10V |
| Power - Max | 83W |
| Supplier Device Package | PG-TO252-3 |
| Gate Charge (Qg) @ Vgs | 28nC @ 10V |
| Category | Discrete Semiconductor Products |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | Transistors - FETs, MOSFETs - Single |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) @ Vds | 710pF @ 100V |
| ECCN | EAR99 |
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