| IPD60N10S4L12ATMA1 | ||
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| 产品描述：
IPD60N10S4L Series 100 V 60 A OptiMOSTM-T2 Power-Transistor - PG-TO-252-3-313
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| 标准包装：1 | ||
| 数据手册： -- |
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- 产品特性
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| Packaging: | Reel |
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| Qg - Gate Charge: | 38 nC |
| Pd - Power Dissipation: | 94 W |
| Package / Case: | TO-252-3 |
| Configuration: | Single |
| Unit Weight: | 0.139332 oz |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 4 ns |
| Series: | IPD60N10 |
| Factory Pack Quantity: | 2500 |
| Brand: | Infineon Technologies |
| Typical Turn-Off Delay Time: | 20 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Transistor Type: | 1 N-Channel |
| ECCN | EAR99 |
| Rds On - Drain-Source Resistance: | 9.8 mOhms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Vgs th - Gate-Source Threshold Voltage: | 1.6 V |
| Vgs - Gate-Source Voltage: | +/- 16 V |
| Mounting Style: | SMD/SMT |
| Fall Time: | 21 ns |
| Manufacturer: | Infineon |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Part # Aliases: | IPD60N10S4L-12 IPD60N10S4L12XT SP000866550 |
| RoHS: | Details |
| Id - Continuous Drain Current: | 60 A |
| Rise Time: | 3 ns |
| Maximum Operating Temperature: | + 175 C |
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