IPB027N10N5ATMA1
  • 量产中
  • PG-TO263-3
  • EAR99
产品描述:
Single N-Channel 100 V 2.7 mOhm 142 nC OptiMOS™5 Power Mosfet - D2PAK-3
标准包装:1000
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FET Feature Standard
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Part Status Active
Manufacturer Infineon Technologies
Series OptiMOS™
Vgs(th) (Max) @ Id 3.8V @ 184µA
Operating Temperature -55°C ~ 175°C (TJ)
Packaging Cut Tape (CT)
Rds On (Max) @ Id, Vgs 2.7 mOhm @ 100A, 10V
Power - Max 250W
Supplier Device Package PG-TO263-3
Gate Charge (Qg) @ Vgs 139nC @ 10V
Category Discrete Semiconductor Products
FET Type MOSFET N-Channel, Metal Oxide
Family Transistors - FETs, MOSFETs - Single
Mounting Type Surface Mount
Input Capacitance (Ciss) @ Vds 10300pF @ 50V
ECCN EAR99
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