DMN6013LFG-7
  • ACTIVE
  • ECL99
Product description : MOSFET N-CH 60V 10.3A PWDI3333-8
SPQ:1
Datasheet :
  • Specifications
  • Product Attributes
  • Documents
  • Product reviews
Packaging: Reel
Qg - Gate Charge: 26.6 nC
Pd - Power Dissipation: 1 W
Package / Case: PowerDI3333-8
Configuration: Single
Unit Weight: 0.002540 oz
Number of Channels: 1 Channel
Typical Turn-On Delay Time: 6.2 ns
Series: DMN60
Factory Pack Quantity: 2000
Brand: Diodes Incorporated
RoHS:  Details
Id - Continuous Drain Current: 10.3 A
Rise Time: 9.9 ns
Maximum Operating Temperature: + 150 C
Rds On - Drain-Source Resistance: 12.3 mOhms
Minimum Operating Temperature: - 55 C
Technology: Si
Vgs th - Gate-Source Threshold Voltage: 1.8 V
Vgs - Gate-Source Voltage: 20 V
Mounting Style: SMD/SMT
Fall Time: 11.7 ns
Manufacturer: Diodes Incorporated
Transistor Polarity: N-Channel
Channel Mode: Enhancement
Typical Turn-Off Delay Time: 27.6 ns
Product Category: MOSFET
Vds - Drain-Source Breakdown Voltage: 60 V
Transistor Type: 1 N-Channel
ECCN ECL99
Datasheet:
You can comment after logging in.

Please enter the verification code in the image below:

verification code