| SI4114DY-T1-GE3 | ||
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| 产品描述：
Single N-Channel 20 V 6 mOhm 5.7 W Surface Mount Power Mosfet - SOIC-8
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| 标准包装：1 | ||
| 数据手册： -- |
- 规格参数
- 产品特性
- 技术文档
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| FET Feature | Standard |
|---|---|
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Series | TrenchFET® |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) @ Vds | 3700pF @ 10V |
| RoHS | Lead free / RoHS Compliant |
| Rds On (Max) @ Id, Vgs | 6 mOhm @ 10A, 10V |
| Power - Max | 5.7W |
| Supplier Device Package | 8-SO |
| Gate Charge (Qg) @ Vgs | 95nC @ 10V |
| Online Catalog | N-Channel Standard FETs |
| Family | FETs - Single |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |
| Packaging | Cut Tape (CT) |
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