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| 产品描述：
Single N-Channel 55 V 0.14 Ohm 7.9 nC Automotive HEXFET® Power Mosfet - TO-252-3
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| 标准包装：3000 | ||
| 数据手册： |
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| FET Feature | Logic Level Gate |
|---|---|
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Drain to Source Voltage (Vdss) | 55V |
| Standard Package | 3,000 |
| Current - Continuous Drain (Id) @ 25掳C | 10A (Tc) |
| Packaging | Tape & Reel (TR) |
| Series | HEXFET庐 |
| Vgs(th) (Max) @ Id | 3V @ 250碌A |
| Input Capacitance (Ciss) @ Vds | 265pF @ 25V |
| Rds On (Max) @ Id, Vgs | 140 mOhm @ 6A, 10V |
| Power - Max | 28W |
| Supplier Device Package | D-PAK (TO-252AA) |
| Gate Charge (Qg) @ Vgs | 7.9nC @ 5V |
| Product Training Modules | High Voltage Integrated Circuits (HVIC Gate Drivers) |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | FETs - Single |
| Mounting Type | Surface Mount |
| ECCN | EAR99 |
| 数据手册： |
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