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| 产品描述：
Transistor: N-MOSFET; unipolar; 40V; 180A; 200W; D2PAK
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| 标准包装：1 | ||
| 数据手册： |
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| FET Feature | Logic Level Gate |
|---|---|
| PCN Assembly/Origin | Gen10.2 Mosfet Qualification 12/Dec/2013 |
| Power - Max | 200W |
| Supplier Device Package | D2PAK |
| Standard Package | 50 |
| Product Training Modules | High Voltage Integrated Circuits (HVIC Gate Drivers) Discrete Power MOSFETs 40V and Below |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | FETs - Single |
| Mounting Type | Surface Mount |
| ECCN | EAR99 |
| Rds On (Max) @ Id, Vgs | 3.1 mOhm @ 75A, 10V |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 160A (Tc) |
| Gate Charge (Qg) @ Vgs | 110nC @ 5V |
| Packaging | Tube |
| Series | HEXFET® |
| Vgs(th) (Max) @ Id | 2.7V @ 250µA |
| Input Capacitance (Ciss) @ Vds | 5080pF @ 25V |
| 数据手册： |
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