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| 产品描述：
Single P-Channel 150 V 295 mOhm 66 nC Automotive HEXFET® Power Mosfet - DPAK
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| 数据手册： |
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| Number of Channels: | 1 Channel |
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| Rds On - Drain-Source Resistance: | 580 mOhms |
| Manufacturer: | Infineon |
| Transistor Polarity: | P-Channel |
| Technology: | Si |
| RoHS: | Details |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | - 150 V |
| Vgs - Gate-Source Voltage: | 20 V |
| Transistor Type: | 1 P-Channel |
| ECCN | EAR99 |
| Packaging: | Reel |
| Qg - Gate Charge: | 44 nC |
| Pd - Power Dissipation: | 110 W |
| Factory Pack Quantity: | 3000 |
| Brand: | Infineon / IR |
| Package / Case: | TO-252-3 |
| Id - Continuous Drain Current: | - 13 A |
| Configuration: | Single |
| Unit Weight: | 0.139332 oz |
| Mounting Style: | SMD/SMT |
| 数据手册： |
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