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| 产品描述：
MOSFET 2N-CH 55V 5.1A 8SOIC
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| 标准包装：1 | ||
| 数据手册： |
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| FET Feature | Logic Level Gate |
|---|---|
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25°C | 5.1A |
| Gate Charge (Qg) @ Vgs | 44nC @ 10V |
| Packaging | Tape & Reel (TR) |
| Series | HEXFET® |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Input Capacitance (Ciss) @ Vds | 780pF @ 25V |
| Rds On (Max) @ Id, Vgs | 50 mOhm @ 5.1A, 10V |
| Power - Max | 2.4W |
| Supplier Device Package | 8-SO |
| Standard Package | 4,000 |
| Product Training Modules | High Voltage Integrated Circuits (HVIC Gate Drivers) |
| FET Type | 2 N-Channel (Dual) |
| Family | FETs - Arrays |
| Mounting Type | Surface Mount |
| 数据手册： |
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