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| 产品描述:
Single N-Channel 40 V 2 mOhm 160 nC Automotive HEXFET® Power Mosfet - D2PAK
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| 标准包装:1 | ||
| 数据手册: |
| FET Feature | Standard |
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| PCN Assembly/Origin | AUIRFxx Series Wafer Process 29/Jul/2013 |
| Power - Max | 300W |
| Supplier Device Package | D2PAK |
| Standard Package | 800 |
| Product Training Modules | High Voltage Integrated Circuits (HVIC Gate Drivers) Discrete Power MOSFETs 40V and Below |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | FETs - Single |
| Mounting Type | Surface Mount |
| ECCN | EAR99 |
| Rds On (Max) @ Id, Vgs | 2 mOhm @ 75A, 10V |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 195A (Tc) |
| Gate Charge (Qg) @ Vgs | 240nC @ 10V |
| Packaging | Tape & Reel (TR) |
| Series | HEXFET® |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Input Capacitance (Ciss) @ Vds | 6450pF @ 25V |
| 数据手册: |
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