SI7309DN-T1-E3
  • 量产中
  • EAR99
产品描述:
Si7309DN Series 60 V 8 A 115 mOhm SMT P-Channel MOSFET - PowerPAK 1212-8
标准包装:1
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Width: 3.05 mm
Rds On - Drain-Source Resistance: 115 mOhms
Pd - Power Dissipation: 3.2 W
Tradename: TrenchFET
Height: 1.04 mm
Vgs - Gate-Source Voltage: 20 V
Number of Channels: 1 Channel
Typical Turn-On Delay Time: 25 ns, 10 ns
Manufacturer: Vishay
Transistor Polarity: P-Channel
Channel Mode: Enhancement
Part # Aliases: SI7309DN-E3
RoHS:  Details
Id - Continuous Drain Current: 3.9 A
Rise Time: 80 ns, 15 ns
Maximum Operating Temperature: + 150 C
Packaging: Reel
Minimum Operating Temperature: - 65 C
Technology: Si
Package / Case: PowerPak1212-8
Configuration: Single
Mounting Style: SMD/SMT
Fall Time: 35 ns, 33 ns
Length: 3.05 mm
Series: SI7
Factory Pack Quantity: 3000
Brand: Vishay Semiconductors
Typical Turn-Off Delay Time: 33 ns, 30 ns
Product Category: MOSFET
Vds - Drain-Source Breakdown Voltage: - 60 V
Transistor Type: 1 P-Channel
ECCN EAR99
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