| SI7309DN-T1-E3 | ||
|---|---|---|
|
|
||
|
||
| 产品描述:
Si7309DN Series 60 V 8 A 115 mOhm SMT P-Channel MOSFET - PowerPAK 1212-8
|
||
| 标准包装:1 | ||
| 数据手册: |
| Width: | 3.05 mm |
|---|---|
| Rds On - Drain-Source Resistance: | 115 mOhms |
| Pd - Power Dissipation: | 3.2 W |
| Tradename: | TrenchFET |
| Height: | 1.04 mm |
| Vgs - Gate-Source Voltage: | 20 V |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 25 ns, 10 ns |
| Manufacturer: | Vishay |
| Transistor Polarity: | P-Channel |
| Channel Mode: | Enhancement |
| Part # Aliases: | SI7309DN-E3 |
| RoHS: | Details |
| Id - Continuous Drain Current: | 3.9 A |
| Rise Time: | 80 ns, 15 ns |
| Maximum Operating Temperature: | + 150 C |
| Packaging: | Reel |
| Minimum Operating Temperature: | - 65 C |
| Technology: | Si |
| Package / Case: | PowerPak1212-8 |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Fall Time: | 35 ns, 33 ns |
| Length: | 3.05 mm |
| Series: | SI7 |
| Factory Pack Quantity: | 3000 |
| Brand: | Vishay Semiconductors |
| Typical Turn-Off Delay Time: | 33 ns, 30 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | - 60 V |
| Transistor Type: | 1 P-Channel |
| ECCN | EAR99 |
| 数据手册: |
|---|
请输入下方图片中的验证码: