STF20N65M5 specifications -Ameya360 electronic components purchase network


STF20N65M5

ACTIVE ECL99
Product description : N-Channel 650 V 18 A 0.19 Ohm MDmesh V Power Mosfet - TO-220FP
SPQ：1
Datasheet : STF20N65M5.pdf

Rds On - Drain-Source Resistance:	190 mOhms
Fall Time:	7.5 ns
Qg - Gate Charge:	36 nC
Series:	MDmesh M5
Transistor Polarity:	N-Channel
Technology:	Si
RoHS:	Details
Product Category:	MOSFET
Vgs th - Gate-Source Threshold Voltage:	4 V
Rise Time:	7.5 ns
Unit Weight:	0.011640 oz
Mounting Style:	Through Hole
Packaging:	Tube
Number of Channels:	1 Channel
Manufacturer:	STMicroelectronics
Pd - Power Dissipation:	130 W
Factory Pack Quantity:	50
Brand:	STMicroelectronics
Package / Case:	TO-220-3
Id - Continuous Drain Current:	18 A
Vds - Drain-Source Breakdown Voltage:	650 V
Vgs - Gate-Source Voltage:	650 V
Transistor Type:	1 N-Channel
ECCN	ECL99

Datasheet： STF20N65M5.pdf

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Stock code :	212835
Mfg name :	STMicroelectronics
MPN :	STF20N65M5
Product description :	N-Channel 650 V 18 A 0.19 Ohm MDmesh V Power Mosfet - TO-220FP

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