| SI7994DP-T1-GE3 | ||
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| 产品描述：
Si7994DP Series Dual N-Channel 30 V 56 mOhm SMT Power Mosfet - PowerPAK-SO-8
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| 标准包装：1 | ||
| 数据手册： |
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| Minimum Operating Temperature: | - 55 C |
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| Packaging: | Reel |
| Pd - Power Dissipation: | 3.5 W |
| Package / Case: | SOIC-8 |
| Configuration: | Dual Dual Drain |
| Unit Weight: | 0.017870 oz |
| Number of Channels: | 2 Channel |
| Typical Turn-On Delay Time: | 35 ns |
| Manufacturer: | Vishay |
| Factory Pack Quantity: | 3000 |
| Brand: | Vishay Semiconductors |
| Typical Turn-Off Delay Time: | 40 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Transistor Type: | 2 N-Channel |
| ECCN | EAR99 |
| Rds On - Drain-Source Resistance: | 5.6 mOhms |
| Width: | 5.89 mm |
| Technology: | Si |
| Height: | 1.04 mm |
| Vgs - Gate-Source Voltage: | 20 V |
| Mounting Style: | SMD/SMT |
| Fall Time: | 15 ns |
| Length: | 4.9 mm |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Part # Aliases: | SI7994DP-GE3 |
| RoHS: | Details |
| Id - Continuous Drain Current: | 20 A |
| Rise Time: | 15 ns |
| Maximum Operating Temperature: | + 150 C |
| 数据手册： |
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