| EMX1DXV6T1G | ||
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| 产品描述:
Dual NPN General Purpose Amplifier Transistor
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| 标准包装:1 | ||
| 数据手册: |
| Packaging: | Reel |
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| Width: | 1.2 mm |
| Minimum Operating Temperature: | - 55 C |
| Package / Case: | SOT-563-6 |
| Gain Bandwidth Product fT: | 180 MHz |
| Unit Weight: | 0.000289 oz |
| Emitter- Base Voltage VEBO: | 7 V |
| Length: | 1.6 mm |
| DC Collector/Base Gain hfe Min: | 120 |
| Series: | EMX1 |
| Factory Pack Quantity: | 4000 |
| RoHS: | Details |
| Collector- Emitter Voltage VCEO Max: | 50 V |
| ECCN | EAR99 |
| Collector- Base Voltage VCBO: | 60 V |
| Collector-Emitter Saturation Voltage: | 0.4 V |
| Pd - Power Dissipation: | 357 mW |
| Height: | 0.55 mm |
| Configuration: | Dual |
| Mounting Style: | SMD/SMT |
| Maximum DC Collector Current: | 0.1 A |
| Continuous Collector Current: | 0.1 A |
| Manufacturer: | ON Semiconductor |
| Transistor Polarity: | NPN |
| Brand: | ON Semiconductor |
| Product Category: | Bipolar Transistors - BJT |
| Maximum Operating Temperature: | + 150 C |
| 数据手册: |
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