| NTZD3155CT1G | ||
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| 产品描述：
Dual N & P-Channel 20 V 0.4/0.5 mOhm 250 mW Small Signal MOSFET - SOT-563
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| 标准包装：1 | ||
| 数据手册： |
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| Rds On - Drain-Source Resistance: | 550 mOhms, 900 mOhms |
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| Width: | 1.2 mm |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Height: | 0.55 mm |
| Vgs - Gate-Source Voltage: | 6 V |
| Mounting Style: | SMD/SMT |
| Fall Time: | 4 ns, 12 ns |
| Length: | 1.6 mm |
| Series: | NTZD3155C |
| Factory Pack Quantity: | 4000 |
| Brand: | ON Semiconductor |
| RoHS: | Details |
| Id - Continuous Drain Current: | 540 mA |
| Rise Time: | 4 ns, 12 ns |
| Maximum Operating Temperature: | + 150 C |
| Packaging: | Reel |
| Product: | MOSFET Small Signal |
| Pd - Power Dissipation: | 250 mW |
| Package / Case: | SOT-563-6 |
| Configuration: | N-Channel, P-Channel |
| Unit Weight: | 0.000289 oz |
| Number of Channels: | 2 Channel |
| Typical Turn-On Delay Time: | 6 ns, 10 ns |
| Manufacturer: | ON Semiconductor |
| Transistor Polarity: | N-Channel, P-Channel |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 16 ns, 35 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Transistor Type: | 1 N-Channel, 1 P-Channel |
| ECCN | EAR99 |
| 数据手册： |
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