IRLIZ34NPBF
  • 量产中
  • EAR99
产品描述:
Transistor: N-MOSFET; unipolar; 55V; 20A; 31W; TO220FP
标准包装:1
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Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 35 mOhms
Pd - Power Dissipation: 37 W
Package / Case: TO-220-3
Configuration: Single
Unit Weight: 0.211644 oz
Number of Channels: 1 Channel
Typical Turn-On Delay Time: 8.9 ns
Manufacturer: Infineon
Factory Pack Quantity: 50
Typical Turn-Off Delay Time: 29 ns
Product Category: MOSFET
Vds - Drain-Source Breakdown Voltage: 55 V
Transistor Type: 1 N-Channel
ECCN EAR99
Qg - Gate Charge: 16.7 nC
Packaging: Tube
Technology: Si
Vgs th - Gate-Source Threshold Voltage: 2 V
Vgs - Gate-Source Voltage: 16 V
Mounting Style: Through Hole
Fall Time: 21 ns
Forward Transconductance - Min: 11 S
Transistor Polarity: N-Channel
Brand: Infineon Technologies
RoHS:  Details
Id - Continuous Drain Current: 22 A
Rise Time: 100 ns
Maximum Operating Temperature: + 175 C
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