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| 产品描述：
Single N-Channel 30 V 110 W 80 nC Silicon Surface Mount Mosfet - TO-252-3
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| 标准包装：1 | ||
| 数据手册： -- |
- 规格参数
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| Power - Max | 110W |
|---|---|
| Rds On (Max) @ Id, Vgs | 3 mOhm @ 40A, 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Part Status | Active |
| Manufacturer | STMicroelectronics |
| Series | DeepGATE™, STripFET™ VI |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Packaging | Cut Tape (CT) |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| FET Feature | Logic Level Gate |
| Supplier Device Package | D²PAK |
| Gate Charge (Qg) @ Vgs | 80nC @ 5V |
| Category | Discrete Semiconductor Products |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | Transistors - FETs, MOSFETs - Single |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) @ Vds | 3800pF @ 25V |
| ECCN | EAR99 |
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