| SI7114ADN-T1-GE3 | ||
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| Product description : N-Channel 30 V 7.5 mΩ 21 nC TrenchFET® Power Mosfet - PowerPAK- 1212-8 | ||
| SPQ：1 | ||
| Datasheet : |
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| Minimum Operating Temperature: | - 55 C |
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| Packaging: | Reel |
| Pd - Power Dissipation: | 3.7 W |
| Tradename: | TrenchFET |
| Height: | 1.04 mm |
| Vgs - Gate-Source Voltage: | 20 V |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 20 ns |
| Forward Transconductance - Min: | 50 S |
| Series: | SI7 |
| Factory Pack Quantity: | 3000 |
| Brand: | Vishay Semiconductors |
| Typical Turn-Off Delay Time: | 20 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Type: | Power Mosfet |
| Maximum Operating Temperature: | + 150 C |
| Rds On - Drain-Source Resistance: | 8.1 mOhms |
| Width: | 3.05 mm |
| Technology: | Si |
| Package / Case: | PowerPak1212-8 |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Fall Time: | 10 ns |
| Length: | 3.05 mm |
| Manufacturer: | Vishay |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Part # Aliases: | SI7114ADN-GE3 |
| RoHS: | Details |
| Id - Continuous Drain Current: | 35 A |
| Rise Time: | 14 ns |
| Transistor Type: | 1 N-Channel |
| ECCN | ECL99 |
| Datasheet： |
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- Replacement Products
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- P2P:A direct drop-in replacement or second source option. Possible minor parametric differences. No change required in most designs.
- Functional Equivalent:A direct replacement or second source option. Possible major parametric differences. Changes may be required in some designs.
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