SI7114ADN-T1-GE3
SI7114ADN-T1-GE3
  • ACTIVE
  • ECL99
Product description : N-Channel 30 V 7.5 mΩ 21 nC TrenchFET® Power Mosfet - PowerPAK- 1212-8
SPQ:1
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Minimum Operating Temperature: - 55 C
Packaging: Reel
Pd - Power Dissipation: 3.7 W
Tradename: TrenchFET
Height: 1.04 mm
Vgs - Gate-Source Voltage: 20 V
Number of Channels: 1 Channel
Typical Turn-On Delay Time: 20 ns
Forward Transconductance - Min: 50 S
Series: SI7
Factory Pack Quantity: 3000
Brand: Vishay Semiconductors
Typical Turn-Off Delay Time: 20 ns
Product Category: MOSFET
Vds - Drain-Source Breakdown Voltage: 30 V
Type: Power Mosfet
Maximum Operating Temperature: + 150 C
Rds On - Drain-Source Resistance: 8.1 mOhms
Width: 3.05 mm
Technology: Si
Package / Case: PowerPak1212-8
Configuration: Single
Mounting Style: SMD/SMT
Fall Time: 10 ns
Length: 3.05 mm
Manufacturer: Vishay
Transistor Polarity: N-Channel
Channel Mode: Enhancement
Part # Aliases: SI7114ADN-GE3
RoHS:  Details
Id - Continuous Drain Current: 35 A
Rise Time: 14 ns
Transistor Type: 1 N-Channel
ECCN ECL99
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