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| 产品描述：
Single N-Channel 200 V 0.023 Ohm 270 nC HEXFET® Power Mosfet - TO-247AC
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| 标准包装：1 | ||
| 数据手册： |
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| Minimum Operating Temperature: | - 55 C |
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| Rds On - Drain-Source Resistance: | 23 mOhms |
| Pd - Power Dissipation: | 580 W |
| Package / Case: | TO-247-3 |
| Vgs - Gate-Source Voltage: | 30 V |
| Mounting Style: | Through Hole |
| Fall Time: | 79 ns |
| Forward Transconductance - Min: | 39 S |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 43 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 200 V |
| Transistor Type: | 1 N-Channel |
| ECCN | EAR99 |
| Qg - Gate Charge: | 180 nC |
| Packaging: | Tube |
| Technology: | Si |
| Configuration: | Single |
| Unit Weight: | 1.340411 oz |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 23 ns |
| Manufacturer: | Infineon |
| Factory Pack Quantity: | 25 |
| Brand: | Infineon Technologies |
| RoHS: | Details |
| Id - Continuous Drain Current: | 94 A |
| Rise Time: | 160 ns |
| Maximum Operating Temperature: | + 175 C |
| 数据手册： |
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