| SIRA02DP-T1-GE3 | ||
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| 产品描述：
SIRA02DP-T1-GE3 , N沟道 MOSFET 晶体管, 50 A, Vds=30 V, 8针 PowerPAK SO封装
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| 标准包装：1 | ||
| 数据手册： |
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| Power - Max | 71.4W |
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| Rds On (Max) @ Id, Vgs | 2 mOhm @ 15A, 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Part Status | Active |
| Manufacturer | Vishay Siliconix |
| Series | TrenchFET® |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| FET Feature | Standard |
| Supplier Device Package | PowerPAK® SO-8 |
| Gate Charge (Qg) @ Vgs | 117nC @ 10V |
| Category | Discrete Semiconductor Products |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | Transistors - FETs, MOSFETs - Single |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) @ Vds | 6150pF @ 15V |
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