IRFSL9N60APBF | ||
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Product description : Single N-Channel 600 V 0.75 Ohms Through Hole Power Mosfet - I2PAK (TO-262) | ||
SPQ:1 | ||
Datasheet : |
Minimum Operating Temperature: | - 55 C |
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Packaging: | Tube |
Pd - Power Dissipation: | 170 W |
Package / Case: | TO-262-3 |
Configuration: | Single |
Unit Weight: | 0.084199 oz |
Number of Channels: | 1 Channel |
Typical Turn-On Delay Time: | 13 ns |
Manufacturer: | Vishay |
Factory Pack Quantity: | 1000 |
Brand: | Vishay Semiconductors |
RoHS: | Details |
Id - Continuous Drain Current: | 9.2 A |
Rise Time: | 25 ns |
Maximum Operating Temperature: | + 150 C |
Rds On - Drain-Source Resistance: | 750 mOhms |
Width: | 4.83 mm |
Technology: | Si |
Height: | 9.65 mm |
Vgs - Gate-Source Voltage: | 30 V |
Mounting Style: | Through Hole |
Fall Time: | 22 ns |
Length: | 10.67 mm |
Transistor Polarity: | N-Channel |
Channel Mode: | Enhancement |
Typical Turn-Off Delay Time: | 30 ns |
Product Category: | MOSFET |
Vds - Drain-Source Breakdown Voltage: | 600 V |
Transistor Type: | 1 N-Channel |
ECCN | EAR99 |
Datasheet: |
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Supplier Code:SP1027
Offline Manufacture or Manufacture authorized supplier owned stock and price , need double confirmation and share out from them
stock | 665 | Update On 2023-12-19 |
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Lead-Time | 10Weeks | |
Supplier SPQ/MOQ | 1/1 | |
Location | -- | |
DateCode | 1730 |
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