IRFSL9N60APBF
IRFSL9N60APBF
  • ACTIVE
  • EAR99
Product description : Single N-Channel 600 V 0.75 Ohms Through Hole Power Mosfet - I2PAK (TO-262)
SPQ:1
Datasheet :
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Minimum Operating Temperature: - 55 C
Packaging: Tube
Pd - Power Dissipation: 170 W
Package / Case: TO-262-3
Configuration: Single
Unit Weight: 0.084199 oz
Number of Channels: 1 Channel
Typical Turn-On Delay Time: 13 ns
Manufacturer: Vishay
Factory Pack Quantity: 1000
Brand: Vishay Semiconductors
RoHS:  Details
Id - Continuous Drain Current: 9.2 A
Rise Time: 25 ns
Maximum Operating Temperature: + 150 C
Rds On - Drain-Source Resistance: 750 mOhms
Width: 4.83 mm
Technology: Si
Height: 9.65 mm
Vgs - Gate-Source Voltage: 30 V
Mounting Style: Through Hole
Fall Time: 22 ns
Length: 10.67 mm
Transistor Polarity: N-Channel
Channel Mode: Enhancement
Typical Turn-Off Delay Time: 30 ns
Product Category: MOSFET
Vds - Drain-Source Breakdown Voltage: 600 V
Transistor Type: 1 N-Channel
ECCN EAR99
Datasheet:
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Supplier Code:SP1027

Offline Manufacture or Manufacture authorized supplier owned stock and price , need double confirmation and share out from them

$1.01804

8.45548

stock665Update On
2023-12-19
Lead-Time10Weeks
Supplier SPQ/MOQ1/1
Location--
DateCode1730

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