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| 产品描述：
Transistor: N-MOSFET; unipolar; 900V; 4.2A; 190W; TO247AC
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| 标准包装：1 | ||
| 数据手册： -- |
- 规格参数
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| Minimum Operating Temperature: | - 55 C |
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| Packaging: | Tube |
| Pd - Power Dissipation: | 190 W |
| Package / Case: | TO-247-3 |
| Configuration: | Single |
| Unit Weight: | 1.340411 oz |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 20 ns |
| Manufacturer: | Vishay |
| Factory Pack Quantity: | 500 |
| Brand: | Vishay Semiconductors |
| RoHS: | Details |
| Id - Continuous Drain Current: | 6.7 A |
| Rise Time: | 34 ns |
| Maximum Operating Temperature: | + 150 C |
| Rds On - Drain-Source Resistance: | 1.6 Ohms |
| Width: | 5.31 mm |
| Technology: | Si |
| Height: | 20.7 mm |
| Vgs - Gate-Source Voltage: | 20 V |
| Mounting Style: | Through Hole |
| Fall Time: | 37 ns |
| Length: | 15.87 mm |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 130 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 900 V |
| Transistor Type: | 1 N-Channel |
| ECCN | EAR99 |
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