| CSD16403Q5A | ||
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| 产品描述：
CSD16403Q5A , N沟道 MOSFET 晶体管, 100 A, Vds=25 V, 8针 SON封装
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| 标准包装：2500 | ||
| 数据手册： |
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| Qg - Gate Charge: | 13.3 nC |
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| Packaging: | Reel |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Package / Case: | VSON-FET-8 |
| Height: | 1 mm |
| Vgs - Gate-Source Voltage: | 16 V |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 11.8 ns |
| Forward Transconductance - Min: | 91 S |
| Series: | CSD16403Q5A |
| Factory Pack Quantity: | 2500 |
| Brand: | Texas Instruments |
| RoHS: | Details |
| Id - Continuous Drain Current: | 28 A |
| Rise Time: | 18.3 ns |
| Maximum Operating Temperature: | + 150 C |
| Rds On - Drain-Source Resistance: | 3.7 mOhms |
| Width: | 5.75 mm |
| Pd - Power Dissipation: | 3.1 W |
| Tradename: | NexFET |
| Vgs th - Gate-Source Threshold Voltage: | 1.6 V |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Fall Time: | 9.2 ns |
| Length: | 4.9 mm |
| Manufacturer: | Texas Instruments |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 15.2 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 25 V |
| Transistor Type: | 1 N-Channel |
| 数据手册： |
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